Global Power Technologies Group Distributer | Distributer elektronskih komponent Global Power Technologies Group - Ocean-Components.com

Global Power Technologies Group: - Global Power Technologies Group, Inc. ("GPTG"), ustanovljena leta 2007, je integrirano podjetje za razvoj in proizvodnjo, namenjeno izdelkom na osnovi tehnologij Silicon Carbide (SiC). Ti izdelki bodo v prihodnjih letih osnova za elektroenergetsko in energetsko industrijo, kjer so potrebne napredne tehnologije za nizkocenovno, visoko učinkovito proizvodnjo, pretvorbo in prenos energije.

Obrazec za zahtevo >

Podobni izdelki

: MBRT200150R; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE SCHOTTKY 150V 100A 3 TOWER; Na zalogi: 2514 pcs; Prenesi: MBRT200150R.pdf; RFQ

: S16BR; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN REV 100V 16A DO203AA; Na zalogi: 28492 pcs; Prenesi: S16BR.pdf; RFQ

: GHXS020A060S-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE SBD SHOTT 600V 20A SOT227; Na zalogi: 3992 pcs; Prenesi: GHXS020A060S-D3.pdf; RFQ

: GP2D010A120U; Proizvajalci: Global Power Technologies Group; Opis: DIODE ARRAY SCHOTTKY 1200V TO247; Na zalogi: 21720 pcs; Prenesi: GP2D010A120U.pdf; RFQ

: GP1M016A060FH; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 600V 16A TO220F; Na zalogi: 6014 pcs; Prenesi: GP1M016A060FH.pdf; RFQ

: GP1M008A025PG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 250V 8A IPAK; Na zalogi: 5781 pcs; Prenesi: GP1M008A025PG.pdf; RFQ

: GP1M003A080FH; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 800V 3A TO220F; Na zalogi: 5921 pcs; Prenesi: GP1M003A080FH.pdf; RFQ

: GP2M002A060PG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 600V 2A; Na zalogi: 5171 pcs; Prenesi: GP2M002A060PG.pdf; RFQ

: MBRT400150; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE SCHOTTKY 150V 200A 3 TOWER; Na zalogi: 2082 pcs; Prenesi: MBRT400150.pdf; RFQ

: GHIS050A120T1P2; Proizvajalci: Global Power Technologies Group; Opis: SI IGBT & SIC SBD HYBRID MODULES; Na zalogi: 876 pcs; Prenesi:; RFQ

: FR6DR02; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 200V 6A DO4; Na zalogi: 20495 pcs; Prenesi: FR6DR02.pdf; RFQ

: GSXD050A020S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 200V 50A SOT227; Na zalogi: 7033 pcs; Prenesi: GSXD050A020S1-D3.pdf; RFQ

: FR16D05; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 200V 16A DO4; Na zalogi: 21884 pcs; Prenesi: FR16D05.pdf; RFQ

: 1N8034-GA; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE SCHOTTKY 650V 9.4A TO257; Na zalogi: 589 pcs; Prenesi: 1N8034-GA.pdf; RFQ

: 1N2137A; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 500V 60A DO5; Na zalogi: 13234 pcs; Prenesi: 1N2137A.pdf; RFQ

: FR12BR05; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 100V 12A DO4; Na zalogi: 21224 pcs; Prenesi: FR12BR05.pdf; RFQ

: GP2D030A120U; Proizvajalci: Global Power Technologies Group; Opis: DIODE SIC 1200V 50A TO24; Na zalogi: 6368 pcs; Prenesi: GP2D030A120U.pdf; RFQ

: GP2M010A060F; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 600V 10A TO220F; Na zalogi: 38132 pcs; Prenesi: GP2M010A060F.pdf; RFQ

: GP1M016A025FG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 250V 16A TO220F; Na zalogi: 4308 pcs; Prenesi: GP1M016A025FG.pdf; RFQ

: 1N1183R; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 50V 35A DO5; Na zalogi: 21448 pcs; Prenesi: 1N1183R.pdf; RFQ

: 1N3765R; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 700V 35A DO5; Na zalogi: 11880 pcs; Prenesi: 1N3765R.pdf; RFQ

: GP1M008A050FG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 500V 8A TO220F; Na zalogi: 4023 pcs; Prenesi: GP1M008A050FG.pdf; RFQ

: GSXD060A008S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 80V 60A SOT227; Na zalogi: 7457 pcs; Prenesi: GSXD060A008S1-D3.pdf; RFQ

: FR6KR05; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 800V 6A DO4; Na zalogi: 15753 pcs; Prenesi: FR6KR05.pdf; RFQ

: FR30M05; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 1KV 30A DO5; Na zalogi: 14476 pcs; Prenesi: FR30M05.pdf; RFQ

: FR6JR05; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 600V 6A DO4; Na zalogi: 17553 pcs; Prenesi: FR6JR05.pdf; RFQ

: GSID150A120T2C1; Proizvajalci: Global Power Technologies Group; Opis: SILICON IGBT MODULES; Na zalogi: 583 pcs; Prenesi: GSID150A120T2C1.pdf; RFQ

: GP1M023A050N; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 500V 23A TO3PN; Na zalogi: 6001 pcs; Prenesi: GP1M023A050N.pdf; RFQ

: GHIS050A060B3P2; Proizvajalci: Global Power Technologies Group; Opis: SI IGBT & SIC SBD HYBRID MODULES; Na zalogi: 1373 pcs; Prenesi: GHIS050A060B3P2.pdf; RFQ

: GSXD100A006S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 60V 100A SOT227; Na zalogi: 6035 pcs; Prenesi: GSXD100A006S1-D3.pdf; RFQ

: GSXF100A100S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE FAST REC 1000V 100A SOT227; Na zalogi: 6804 pcs; Prenesi: GSXF100A100S1-D3.pdf; RFQ

: S25D; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 200V 25A DO203AA; Na zalogi: 15159 pcs; Prenesi: S25D.pdf; RFQ

: GPA015A120MN-ND; Proizvajalci: Global Power Technologies Group; Opis: IGBT 1200V 30A 212W TO3PN; Na zalogi: 69133 pcs; Prenesi: GPA015A120MN-ND.pdf; RFQ

: S40D; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 200V 40A DO5; Na zalogi: 23314 pcs; Prenesi: S40D.pdf; RFQ

: GHIS100A120T2P2; Proizvajalci: Global Power Technologies Group; Opis: SI IGBT & SIC SBD HYBRID MODULES; Na zalogi: 463 pcs; Prenesi: GHIS100A120T2P2.pdf; RFQ

: FST16020; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE MODULE 20V 160A TO249AB; Na zalogi: 1894 pcs; Prenesi: FST16020.pdf; RFQ

: FR12G02; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 400V 12A DO4; Na zalogi: 15471 pcs; Prenesi: FR12G02.pdf; RFQ

: GP2M005A060PG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 600V 4.2A IPAK; Na zalogi: 4573 pcs; Prenesi: GP2M005A060PG.pdf; RFQ

: GP2D060A120U; Proizvajalci: Global Power Technologies Group; Opis: DIODE ARRAY SCHOTTKY 1200V TO247; Na zalogi: 4864 pcs; Prenesi: GP2D060A120U.pdf; RFQ

: GSID080A120B1A5; Proizvajalci: Global Power Technologies Group; Opis: SILICON IGBT MODULES; Na zalogi: 1651 pcs; Prenesi: GSID080A120B1A5.pdf; RFQ

: GHXS020A060S-D1; Proizvajalci: Global Power Technologies Group; Opis: MOD SBD BRIDGE 600V 20A SOT227; Na zalogi: 2450 pcs; Prenesi: GHXS020A060S-D1.pdf; RFQ

: GP1M016A060F; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 600V 16A TO220F; Na zalogi: 5287 pcs; Prenesi: GP1M016A060F.pdf; RFQ

: GSXD160A010S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 100V 160A SOT227; Na zalogi: 4641 pcs; Prenesi: GSXD160A010S1-D3.pdf; RFQ

: S12J; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 600V 12A DO4; Na zalogi: 19626 pcs; Prenesi: S12J.pdf; RFQ

: MUR2540R; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 400V 25A DO4; Na zalogi: 12969 pcs; Prenesi: MUR2540R.pdf; RFQ

: GSXD050A015S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 150V 50A SOT227; Na zalogi: 6765 pcs; Prenesi: GSXD050A015S1-D3.pdf; RFQ

: GP2M020A050H; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 500V 18A TO220; Na zalogi: 4883 pcs; Prenesi: GP2M020A050H.pdf; RFQ

: FR40B05; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 100V 40A DO5; Na zalogi: 12853 pcs; Prenesi: FR40B05.pdf; RFQ

: GHXS015A120S-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOT SBD 1200V 15A SOT227; Na zalogi: 2822 pcs; Prenesi: GHXS015A120S-D3.pdf; RFQ

: GCMS020A120S1-E1; Proizvajalci: Global Power Technologies Group; Opis: SIC MOSFET/ SBD MODULE SOT-227 C; Na zalogi: 722 pcs; Prenesi: GCMS020A120S1-E1.pdf; RFQ

Izberite svojo državo ali regijo.

Kategorija izdelka

Sorodne novice

Podobni izdelki