Global Power Technologies Group Distributer | Distributer elektronskih komponent Global Power Technologies Group - Ocean-Components.com

Global Power Technologies Group: - Global Power Technologies Group, Inc. ("GPTG"), ustanovljena leta 2007, je integrirano podjetje za razvoj in proizvodnjo, namenjeno izdelkom na osnovi tehnologij Silicon Carbide (SiC). Ti izdelki bodo v prihodnjih letih osnova za elektroenergetsko in energetsko industrijo, kjer so potrebne napredne tehnologije za nizkocenovno, visoko učinkovito proizvodnjo, pretvorbo in prenos energije.

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: S12Q; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 1200V 12A DO4; Na zalogi: 18866 pcs; Prenesi: S12Q.pdf; RFQ

: FR20JR02; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 600V 20A DO5; Na zalogi: 12537 pcs; Prenesi: FR20JR02.pdf; RFQ

: S6K; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 800V 6A DO4; Na zalogi: 22836 pcs; Prenesi: S6K.pdf; RFQ

: GP2M008A060PGH; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 600V 7.5A IPAK; Na zalogi: 5108 pcs; Prenesi: GP2M008A060PGH.pdf; RFQ

: GSXD080A010S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 100V 80A SOT227; Na zalogi: 7612 pcs; Prenesi: GSXD080A010S1-D3.pdf; RFQ

: GHXS060A120S-D3; Proizvajalci: Global Power Technologies Group; Opis: MOD SBD BRIDGE 1200V 60A SOT227; Na zalogi: 921 pcs; Prenesi: GHXS060A120S-D3.pdf; RFQ

: S12D; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 200V 12A DO4; Na zalogi: 20149 pcs; Prenesi: S12D.pdf; RFQ

: FR16BR02; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 100V 16A DO4; Na zalogi: 19995 pcs; Prenesi: FR16BR02.pdf; RFQ

: FR30DR02; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 200V 30A DO5; Na zalogi: 13915 pcs; Prenesi: FR30DR02.pdf; RFQ

: GP1M012A060H; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 600V 12A TO220; Na zalogi: 4100 pcs; Prenesi: GP1M012A060H.pdf; RFQ

: FR6G05; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 400V 16A DO4; Na zalogi: 19937 pcs; Prenesi: FR6G05.pdf; RFQ

: FST10020; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE MODULE 20V 100A TO249AB; Na zalogi: 2046 pcs; Prenesi: FST10020.pdf; RFQ

: S40V; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 1.4KV 40A DO5; Na zalogi: 16955 pcs; Prenesi: S40V.pdf; RFQ

: S6G; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 400V 6A DO4; Na zalogi: 28604 pcs; Prenesi: S6G.pdf; RFQ

: 1N3211; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 300V 15A DO5; Na zalogi: 17885 pcs; Prenesi: 1N3211.pdf; RFQ

: GSXD120A006S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 60V 240A SOT227; Na zalogi: 7175 pcs; Prenesi: GSXD120A006S1-D3.pdf; RFQ

: FST12060; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE MODULE 60V 120A TO249AB; Na zalogi: 2309 pcs; Prenesi: FST12060.pdf; RFQ

: GHXS030A120S-D1E; Proizvajalci: Global Power Technologies Group; Opis: MOD SBD BRIDGE 1200V 30A SOT227; Na zalogi: 880 pcs; Prenesi: GHXS030A120S-D1E.pdf; RFQ

: FR12DR02; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 200V 12A DO4; Na zalogi: 24717 pcs; Prenesi: FR12DR02.pdf; RFQ

: GHIS100A120S2B1; Proizvajalci: Global Power Technologies Group; Opis: SI IGBT & SIC SBD HYBRID MODULES; Na zalogi: 466 pcs; Prenesi: GHIS100A120S2B1.pdf; RFQ

: GP2M002A065FG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 650V 1.8A TO220F; Na zalogi: 5168 pcs; Prenesi: GP2M002A065FG.pdf; RFQ

: GP1M005A050PH; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 500V 4.5A IPAK; Na zalogi: 4702 pcs; Prenesi: GP1M005A050PH.pdf; RFQ

: GP2D020A120U; Proizvajalci: Global Power Technologies Group; Opis: DIODE ARRAY SCHOTTKY 1200V TO247; Na zalogi: 8684 pcs; Prenesi: GP2D020A120U.pdf; RFQ

: GP2M005A060FG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 600V 4.2A TO220F; Na zalogi: 4270 pcs; Prenesi: GP2M005A060FG.pdf; RFQ

: MBRT200200; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE SCHOTTKY 200V 100A 3 TOWER; Na zalogi: 2464 pcs; Prenesi: MBRT200200.pdf; RFQ

: GP1M005A050FSH; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 500V 4A TO220F; Na zalogi: 4195 pcs; Prenesi: GP1M005A050FSH.pdf; RFQ

: GP1M010A060H; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 600V 10A TO220; Na zalogi: 4910 pcs; Prenesi: GP1M010A060H.pdf; RFQ

: FR30D02; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 200V 30A DO5; Na zalogi: 11858 pcs; Prenesi: FR30D02.pdf; RFQ

: GB05SLT12-252; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE SILICON 1.2KV 5A TO252; Na zalogi: 25657 pcs; Prenesi: GB05SLT12-252.pdf; RFQ

: FR12JR05; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 600V 12A DO4; Na zalogi: 16362 pcs; Prenesi: FR12JR05.pdf; RFQ

: GP1M005A050CH; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 500V 4.5A DPAK; Na zalogi: 4443 pcs; Prenesi: GP1M005A050CH.pdf; RFQ

: S40DR; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 200V 40A DO5; Na zalogi: 19734 pcs; Prenesi: S40DR.pdf; RFQ

: S12M; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 1000V 12A DO4; Na zalogi: 20747 pcs; Prenesi: S12M.pdf; RFQ

: 1N1189; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 600V 35A DO5; Na zalogi: 15337 pcs; Prenesi: 1N1189.pdf; RFQ

: FR16JR02; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 600V 16A DO4; Na zalogi: 16812 pcs; Prenesi: FR16JR02.pdf; RFQ

: GP1M007A090H; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 900V 7A TO220; Na zalogi: 4327 pcs; Prenesi: GP1M007A090H.pdf; RFQ

: GSXD160A020S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 200V 160A SOT227; Na zalogi: 4186 pcs; Prenesi: GSXD160A020S1-D3.pdf; RFQ

: GP3D050A120B; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 1.2KV 50A TO247-2; Na zalogi: 5176 pcs; Prenesi:; RFQ

: 1N3214R; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 600V 15A DO5; Na zalogi: 16940 pcs; Prenesi: 1N3214R.pdf; RFQ

: GHIS040A120S-A1; Proizvajalci: Global Power Technologies Group; Opis: IGBT BOOST CHOP 1200V 80A SOT227; Na zalogi: 2662 pcs; Prenesi: GHIS040A120S-A1.pdf; RFQ

: S40QR; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 1.2KV 40A DO5; Na zalogi: 14458 pcs; Prenesi: S40QR.pdf; RFQ

: GSXD030A010S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 100V 30A SOT227; Na zalogi: 10193 pcs; Prenesi: GSXD030A010S1-D3.pdf; RFQ

: GP1M011A050FH; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 500V 11A TO220F; Na zalogi: 4692 pcs; Prenesi: GP1M011A050FH.pdf; RFQ

: S12QR; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 1.2KV 12A DO4; Na zalogi: 15966 pcs; Prenesi: S12QR.pdf; RFQ

: FST100100; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE MODULE 100V 100A TO249AB; Na zalogi: 2120 pcs; Prenesi: FST100100.pdf; RFQ

: GKN26/04; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 400V 25A DO4; Na zalogi: 16097 pcs; Prenesi: GKN26/04.pdf; RFQ

: GP1M016A025HG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 250V 16A TO220; Na zalogi: 5545 pcs; Prenesi: GP1M016A025HG.pdf; RFQ

: GSXD100A018S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 180V 100A SOT227; Na zalogi: 5757 pcs; Prenesi: GSXD100A018S1-D3.pdf; RFQ

: FST10080; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE MODULE 80V 100A TO249AB; Na zalogi: 1886 pcs; Prenesi: FST10080.pdf; RFQ

: S6J; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 600V 6A DO4; Na zalogi: 24752 pcs; Prenesi: S6J.pdf; RFQ

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