Global Power Technologies Group Distributer | Distributer elektronskih komponent Global Power Technologies Group - Ocean-Components.com

Global Power Technologies Group: - Global Power Technologies Group, Inc. ("GPTG"), ustanovljena leta 2007, je integrirano podjetje za razvoj in proizvodnjo, namenjeno izdelkom na osnovi tehnologij Silicon Carbide (SiC). Ti izdelki bodo v prihodnjih letih osnova za elektroenergetsko in energetsko industrijo, kjer so potrebne napredne tehnologije za nizkocenovno, visoko učinkovito proizvodnjo, pretvorbo in prenos energije.

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Podobni izdelki

: GSXF060A040S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE FAST REC 400V 60A SOT227; Na zalogi: 9412 pcs; Prenesi: GSXF060A040S1-D3.pdf; RFQ

: S25BR; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN REV 100V 25A DO203AA; Na zalogi: 29190 pcs; Prenesi: S25BR.pdf; RFQ

: GP1M011A050HS; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 500V 10A TO220; Na zalogi: 4745 pcs; Prenesi: GP1M011A050HS.pdf; RFQ

: GSXD080A006S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 60V 80A SOT227; Na zalogi: 7824 pcs; Prenesi: GSXD080A006S1-D3.pdf; RFQ

: GPA040A120L-ND; Proizvajalci: Global Power Technologies Group; Opis: IGBT 1200V 80A 455W TO264; Na zalogi: 29660 pcs; Prenesi: GPA040A120L-ND.pdf; RFQ

: GCMS007A120S7B1; Proizvajalci: Global Power Technologies Group; Opis: SIC MOSFET/SBD HALF BRIDGE MODUL; Na zalogi: 105 pcs; Prenesi: GCMS007A120S7B1.pdf; RFQ

: GHXS030A120S-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTKY 1200V 30A SOT227; Na zalogi: 1670 pcs; Prenesi: GHXS030A120S-D3.pdf; RFQ

: GP2M005A050HG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 500V 4.5A TO220; Na zalogi: 4325 pcs; Prenesi: GP2M005A050HG.pdf; RFQ

: 1N3208R; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 50V 15A DO5; Na zalogi: 18487 pcs; Prenesi: 1N3208R.pdf; RFQ

: 1N3209; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 100V 15A DO5; Na zalogi: 16528 pcs; Prenesi: 1N3209.pdf; RFQ

: FR16M05; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 1KV 16A DO4; Na zalogi: 15777 pcs; Prenesi: FR16M05.pdf; RFQ

: GB05SLT12-220; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE SCHOTTKY 1.2KV 5A TO220AC; Na zalogi: 17135 pcs; Prenesi: GB05SLT12-220.pdf; RFQ

: GSXF120A100S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE FAST REC 1000V 120A SOT227; Na zalogi: 6036 pcs; Prenesi: GSXF120A100S1-D3.pdf; RFQ

: GHIS100A120T2C1; Proizvajalci: Global Power Technologies Group; Opis: SI IGBT & SIC SBD HYBRID MODULES; Na zalogi: 175 pcs; Prenesi: GHIS100A120T2C1.pdf; RFQ

: FR16J02; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 600V 16A DO4; Na zalogi: 21813 pcs; Prenesi: FR16J02.pdf; RFQ

: GP2D010A120A; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 1.2KV 10A TO220-2; Na zalogi: 14762 pcs; Prenesi: GP2D010A120A.pdf; RFQ

: GHIS040A060S-A2; Proizvajalci: Global Power Technologies Group; Opis: IGBT BUCK CHOP 600V 80A SOT227; Na zalogi: 3893 pcs; Prenesi: GHIS040A060S-A2.pdf; RFQ

: GP1M015A050FH; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 500V 14A TO220F; Na zalogi: 4568 pcs; Prenesi: GP1M015A050FH.pdf; RFQ

: 1N3880; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 100V 6A DO4; Na zalogi: 20231 pcs; Prenesi: 1N3880.pdf; RFQ

: GP1M018A020HG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 200V 18A TO220; Na zalogi: 64898 pcs; Prenesi: GP1M018A020HG.pdf; RFQ

: 1N1202AR; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 200V 12A DO5; Na zalogi: 23826 pcs; Prenesi: 1N1202AR.pdf; RFQ

: GP1M003A080H; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 800V 3A TO220; Na zalogi: 4675 pcs; Prenesi: GP1M003A080H.pdf; RFQ

: FR16MR05; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 1KV 16A DO4; Na zalogi: 20289 pcs; Prenesi: FR16MR05.pdf; RFQ

: MUR2520R; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 200V 25A DO4; Na zalogi: 11856 pcs; Prenesi: MUR2520R.pdf; RFQ

: FR30AR02; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 50V 30A DO5; Na zalogi: 13023 pcs; Prenesi: FR30AR02.pdf; RFQ

: S25MR; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN REV 1KV 25A DO203AA; Na zalogi: 16849 pcs; Prenesi: S25MR.pdf; RFQ

: FR30A02; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 50V 30A DO5; Na zalogi: 13964 pcs; Prenesi: FR30A02.pdf; RFQ

: S12K; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 800V 12A DO4; Na zalogi: 18187 pcs; Prenesi: S12K.pdf; RFQ

: GP1M003A050CG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 500V 2.5A DPAK; Na zalogi: 5877 pcs; Prenesi: GP1M003A050CG.pdf; RFQ

: GP1M004A090FH; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 900V 4A TO220F; Na zalogi: 4008 pcs; Prenesi: GP1M004A090FH.pdf; RFQ

: MUR2560; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 600V 25A DO4; Na zalogi: 11580 pcs; Prenesi: MUR2560.pdf; RFQ

: GSXD160A012S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 120V 160A SOT227; Na zalogi: 4571 pcs; Prenesi: GSXD160A012S1-D3.pdf; RFQ

: GP2D006A065A; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 650V 6A TO220-2; Na zalogi: 43451 pcs; Prenesi: GP2D006A065A.pdf; RFQ

: S12JR; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 600V 12A DO4; Na zalogi: 32700 pcs; Prenesi: S12JR.pdf; RFQ

: 1N2138A; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 600V 60A DO5; Na zalogi: 16237 pcs; Prenesi: 1N2138A.pdf; RFQ

: GHIS080A120S1-E1; Proizvajalci: Global Power Technologies Group; Opis: SI IGBT/ SIC SBD HYBRID MODULE S; Na zalogi: 1707 pcs; Prenesi: GHIS080A120S1-E1.pdf; RFQ

: GSID600A120S4B1; Proizvajalci: Global Power Technologies Group; Opis: SILICON IGBT MODULES; Na zalogi: 529 pcs; Prenesi: GSID600A120S4B1.pdf; RFQ

: GP3D060A120B; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 1200V 60A TO247; Na zalogi: 5682 pcs; Prenesi:; RFQ

: GP1M020A060M; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 600V 20A TO3P; Na zalogi: 4425 pcs; Prenesi: GP1M020A060M.pdf; RFQ

: MBRT200200R; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE SCHOTTKY 200V 100A 3 TOWER; Na zalogi: 2395 pcs; Prenesi: MBRT200200R.pdf; RFQ

: GP1M016A060N; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 600V 16A TO3PN; Na zalogi: 4350 pcs; Prenesi: GP1M016A060N.pdf; RFQ

: S16QR; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN REV 1.2KV 16A DO203AA; Na zalogi: 20758 pcs; Prenesi: S16QR.pdf; RFQ

: 1N2128A; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 50V 60A DO5; Na zalogi: 15922 pcs; Prenesi: 1N2128A.pdf; RFQ

: S6DR; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 200V 6A DO4; Na zalogi: 22534 pcs; Prenesi: S6DR.pdf; RFQ

: S6JR; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 600V 6A DO4; Na zalogi: 28198 pcs; Prenesi: S6JR.pdf; RFQ

: S25JR; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN REV 600V 25A DO203AA; Na zalogi: 18156 pcs; Prenesi: S25JR.pdf; RFQ

: GCMS080A120B1H1; Proizvajalci: Global Power Technologies Group; Opis: SIC MOSFET FULL BRIDGE MODULE B1; Na zalogi: 523 pcs; Prenesi: GCMS080A120B1H1.pdf; RFQ

: GSXD030A004S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 45V 30A SOT227; Na zalogi: 12863 pcs; Prenesi: GSXD030A004S1-D3.pdf; RFQ

: GHIS060A120S1-E1; Proizvajalci: Global Power Technologies Group; Opis: SI IGBT/ SIC SBD HYBRID MODULE S; Na zalogi: 2618 pcs; Prenesi: GHIS060A120S1-E1.pdf; RFQ

: S25G; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 400V 25A DO203AA; Na zalogi: 16104 pcs; Prenesi: S25G.pdf; RFQ

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