Global Power Technologies Group Distributer | Distributer elektronskih komponent Global Power Technologies Group - Ocean-Components.com

Global Power Technologies Group: - Global Power Technologies Group, Inc. ("GPTG"), ustanovljena leta 2007, je integrirano podjetje za razvoj in proizvodnjo, namenjeno izdelkom na osnovi tehnologij Silicon Carbide (SiC). Ti izdelki bodo v prihodnjih letih osnova za elektroenergetsko in energetsko industrijo, kjer so potrebne napredne tehnologije za nizkocenovno, visoko učinkovito proizvodnjo, pretvorbo in prenos energije.

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Podobni izdelki

: GP1M008A050CG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 500V 8A DPAK; Na zalogi: 5909 pcs; Prenesi: GP1M008A050CG.pdf; RFQ

: GSXD050A008S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 80V 50A SOT227; Na zalogi: 7809 pcs; Prenesi: GSXD050A008S1-D3.pdf; RFQ

: GSID150A120S3B1; Proizvajalci: Global Power Technologies Group; Opis: SILICON IGBT MODULES; Na zalogi: 1140 pcs; Prenesi: GSID150A120S3B1.pdf; RFQ

: GP1M006A065CH; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 650V 5.5A DPAK; Na zalogi: 6009 pcs; Prenesi: GP1M006A065CH.pdf; RFQ

: GPI040A060MN-FD; Proizvajalci: Global Power Technologies Group; Opis: IGBT 600V 80A 231W TO3PN; Na zalogi: 41140 pcs; Prenesi: GPI040A060MN-FD.pdf; RFQ

: GP2M008A060FG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 600V 7.5A TO220F; Na zalogi: 5947 pcs; Prenesi: GP2M008A060FG.pdf; RFQ

: GCMS040A120S1-E1; Proizvajalci: Global Power Technologies Group; Opis: SIC MOSFET/ SBD MODULE SOT-227 C; Na zalogi: 1331 pcs; Prenesi: GCMS040A120S1-E1.pdf; RFQ

: GP2M009A090FG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 900V 9A TO220F; Na zalogi: 4530 pcs; Prenesi: GP2M009A090FG.pdf; RFQ

: GP1M008A025CG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 250V 8A DPAK; Na zalogi: 5618 pcs; Prenesi: GP1M008A025CG.pdf; RFQ

: FST120100; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE MODULE 100V 120A TO249AB; Na zalogi: 1845 pcs; Prenesi: FST120100.pdf; RFQ

: GSXF060A100S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE FAST REC 1000V 60A SOT227; Na zalogi: 9315 pcs; Prenesi: GSXF060A100S1-D3.pdf; RFQ

: GKN26/14; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 1.4KV 25A DO4; Na zalogi: 20195 pcs; Prenesi: GKN26/14.pdf; RFQ

: GSXD120A020S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 200V 120A SOT227; Na zalogi: 6577 pcs; Prenesi: GSXD120A020S1-D3.pdf; RFQ

: GP1M007A065CG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 650V 6.5A DPAK; Na zalogi: 5603 pcs; Prenesi: GP1M007A065CG.pdf; RFQ

: FR20KR05; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 800V 20A DO5; Na zalogi: 14182 pcs; Prenesi: FR20KR05.pdf; RFQ

: 1N1183AR; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 50V 40A DO5; Na zalogi: 13815 pcs; Prenesi: 1N1183AR.pdf; RFQ

: GP1M003A050PG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 500V 2.5A IPAK; Na zalogi: 5058 pcs; Prenesi: GP1M003A050PG.pdf; RFQ

: GP1M008A080FH; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 800V 8A TO220F; Na zalogi: 4903 pcs; Prenesi: GP1M008A080FH.pdf; RFQ

: GSXD080A018S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 180V 80A SOT227; Na zalogi: 6098 pcs; Prenesi: GSXD080A018S1-D3.pdf; RFQ

: FST16060; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE MODULE 60V 160A TO249AB; Na zalogi: 2163 pcs; Prenesi: FST16060.pdf; RFQ

: 1N1202A; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 200V 12A DO4; Na zalogi: 20207 pcs; Prenesi: 1N1202A.pdf; RFQ

: GP1M003A050FG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 500V 2.5A TO220F; Na zalogi: 4033 pcs; Prenesi: GP1M003A050FG.pdf; RFQ

: FR16DR05; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 200V 16A DO4; Na zalogi: 18962 pcs; Prenesi: FR16DR05.pdf; RFQ

: GHXS010A060S-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE SBD SCHOTT 600V 10A SOT227; Na zalogi: 4490 pcs; Prenesi: GHXS010A060S-D3.pdf; RFQ

: 1N2128AR; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 50V 60A DO5; Na zalogi: 13584 pcs; Prenesi: 1N2128AR.pdf; RFQ

: GSXF100A120S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE FAST REC 1200V 100A SOT227; Na zalogi: 7066 pcs; Prenesi: GSXF100A120S1-D3.pdf; RFQ

: GP1M006A070F; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 700V 5A TO220F; Na zalogi: 4128 pcs; Prenesi: GP1M006A070F.pdf; RFQ

: GP1M008A050PG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 500V 8A IPAK; Na zalogi: 5791 pcs; Prenesi: GP1M008A050PG.pdf; RFQ

: FR6B05; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 100V 16A DO4; Na zalogi: 20069 pcs; Prenesi: FR6B05.pdf; RFQ

: FR40BR05; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 100V 40A DO5; Na zalogi: 17484 pcs; Prenesi: FR40BR05.pdf; RFQ

: GSXD100A015S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 150V 100A SOT227; Na zalogi: 6747 pcs; Prenesi: GSXD100A015S1-D3.pdf; RFQ

: FR12B05; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 100V 12A DO4; Na zalogi: 21698 pcs; Prenesi: FR12B05.pdf; RFQ

: GP1M009A070F; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 700V 9A TO220F; Na zalogi: 5103 pcs; Prenesi: GP1M009A070F.pdf; RFQ

: GSXF100A040S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE FAST REC 400V 100A SOT227; Na zalogi: 5367 pcs; Prenesi: GSXF100A040S1-D3.pdf; RFQ

: GP2M002A065CG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 650V 1.8A DPAK; Na zalogi: 4326 pcs; Prenesi: GP2M002A065CG.pdf; RFQ

: 1N1188A; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 400V 40A DO5; Na zalogi: 13666 pcs; Prenesi: 1N1188A.pdf; RFQ

: FR12KR05; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 800V 12A DO4; Na zalogi: 19910 pcs; Prenesi: FR12KR05.pdf; RFQ

: S16D; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 200V 16A DO203AA; Na zalogi: 29966 pcs; Prenesi: S16D.pdf; RFQ

: GSXD080A008S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 80V 80A SOT227; Na zalogi: 8267 pcs; Prenesi: GSXD080A008S1-D3.pdf; RFQ

: GP1M003A080PH; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 800V 3A IPAK; Na zalogi: 4710 pcs; Prenesi: GP1M003A080PH.pdf; RFQ

: FR20B02; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 100V 20A DO5; Na zalogi: 12457 pcs; Prenesi: FR20B02.pdf; RFQ

: GP3D030A060B; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 600V 30A TO247; Na zalogi: 4073 pcs; Prenesi:; RFQ

: GHXS020A060S-D1E; Proizvajalci: Global Power Technologies Group; Opis: MOD SBD BRIDGE 600V 20A SOT227; Na zalogi: 1726 pcs; Prenesi: GHXS020A060S-D1E.pdf; RFQ

: FST12020; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE MODULE 20V 120A TO249AB; Na zalogi: 2049 pcs; Prenesi: FST12020.pdf; RFQ

: FR30MR05; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 1KV 30A DO5; Na zalogi: 15045 pcs; Prenesi: FR30MR05.pdf; RFQ

: GSXD100A012S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 120V 100A SOT227; Na zalogi: 7317 pcs; Prenesi: GSXD100A012S1-D3.pdf; RFQ

: GDP24D060B; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 600V 12A TO247-3; Na zalogi: 4685 pcs; Prenesi: GDP24D060B.pdf; RFQ

: 1N1187; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 300V 35A DO5; Na zalogi: 21950 pcs; Prenesi: 1N1187.pdf; RFQ

: FST160100; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE MODULE 100V 160A TO249AB; Na zalogi: 1803 pcs; Prenesi: FST160100.pdf; RFQ

: GP2D006A060A; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 600V 6A TO220-2; Na zalogi: 38803 pcs; Prenesi: GP2D006A060A.pdf; RFQ

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