Global Power Technologies Group Distributer | Distributer elektronskih komponent Global Power Technologies Group - Ocean-Components.com

Global Power Technologies Group: - Global Power Technologies Group, Inc. ("GPTG"), ustanovljena leta 2007, je integrirano podjetje za razvoj in proizvodnjo, namenjeno izdelkom na osnovi tehnologij Silicon Carbide (SiC). Ti izdelki bodo v prihodnjih letih osnova za elektroenergetsko in energetsko industrijo, kjer so potrebne napredne tehnologije za nizkocenovno, visoko učinkovito proizvodnjo, pretvorbo in prenos energije.

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Podobni izdelki

: GP2M005A050CG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 500V 4.5A DPAK; Na zalogi: 4547 pcs; Prenesi: GP2M005A050CG.pdf; RFQ

: S25K; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 800V 25A DO203AA; Na zalogi: 18868 pcs; Prenesi: S25K.pdf; RFQ

: GP2M002A065PG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 650V 1.8A IPAK; Na zalogi: 4614 pcs; Prenesi: GP2M002A065PG.pdf; RFQ

: S40K; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 800V 40A DO5; Na zalogi: 15736 pcs; Prenesi: S40K.pdf; RFQ

: FR40DR02; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 200V 40A DO5; Na zalogi: 11899 pcs; Prenesi: FR40DR02.pdf; RFQ

: GPA020A120MN-FD; Proizvajalci: Global Power Technologies Group; Opis: IGBT 1200V 40A 223W TO3PN; Na zalogi: 52247 pcs; Prenesi: GPA020A120MN-FD.pdf; RFQ

: GHXS050A060S-D4; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTT SBD 600V 50A SOT227; Na zalogi: 2103 pcs; Prenesi: GHXS050A060S-D4.pdf; RFQ

: GPA025A120MN-ND; Proizvajalci: Global Power Technologies Group; Opis: IGBT 1200V 50A 312W TO3PN; Na zalogi: 60438 pcs; Prenesi: GPA025A120MN-ND.pdf; RFQ

: GP1M006A070FH; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 700V 5A TO220F; Na zalogi: 4916 pcs; Prenesi: GP1M006A070FH.pdf; RFQ

: GSXF120A060S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE FAST REC 600V 120A SOT227; Na zalogi: 6342 pcs; Prenesi: GSXF120A060S1-D3.pdf; RFQ

: S16DR; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN REV 200V 16A DO203AA; Na zalogi: 28729 pcs; Prenesi: S16DR.pdf; RFQ

: GSID200A120S5C1; Proizvajalci: Global Power Technologies Group; Opis: IGBT MODULE 1200V 335A; Na zalogi: 560 pcs; Prenesi: GSID200A120S5C1.pdf; RFQ

: FR6J02; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 600V 6A DO4; Na zalogi: 16030 pcs; Prenesi: FR6J02.pdf; RFQ

: GSXD120A010S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 100V 120A SOT227; Na zalogi: 6305 pcs; Prenesi: GSXD120A010S1-D3.pdf; RFQ

: GHXS030A120S-D1; Proizvajalci: Global Power Technologies Group; Opis: MOD SBD BRIDGE 1200V 30A SOT227; Na zalogi: 981 pcs; Prenesi: GHXS030A120S-D1.pdf; RFQ

: GP2M020A050N; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 500V 20A TO3PN; Na zalogi: 4074 pcs; Prenesi: GP2M020A050N.pdf; RFQ

: GKR26/14; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 1.4KV 25A DO4; Na zalogi: 17422 pcs; Prenesi: GKR26/14.pdf; RFQ

: S25Q; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 1.2KV 25A DO203AA; Na zalogi: 17349 pcs; Prenesi: S25Q.pdf; RFQ

: FR30JR02; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 600V 30A DO5; Na zalogi: 11821 pcs; Prenesi: FR30JR02.pdf; RFQ

: GP1M016A025PG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 250V 16A IPAK; Na zalogi: 5321 pcs; Prenesi: GP1M016A025PG.pdf; RFQ

: S40J; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 600V 40A DO5; Na zalogi: 20018 pcs; Prenesi: S40J.pdf; RFQ

: S16G; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 400V 16A DO203AA; Na zalogi: 23968 pcs; Prenesi: S16G.pdf; RFQ

: FR12MR05; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 1KV 12A DO4; Na zalogi: 17676 pcs; Prenesi: FR12MR05.pdf; RFQ

: GPA040A120MN-FD; Proizvajalci: Global Power Technologies Group; Opis: IGBT 1200V 80A 480W TO3PN; Na zalogi: 27573 pcs; Prenesi: GPA040A120MN-FD.pdf; RFQ

: FR20A02; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 50V 20A DO5; Na zalogi: 14343 pcs; Prenesi: FR20A02.pdf; RFQ

: GP1M009A090FH; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 900V 9A TO220F; Na zalogi: 4854 pcs; Prenesi: GP1M009A090FH.pdf; RFQ

: FR16KR05; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 800V 16A DO4; Na zalogi: 19140 pcs; Prenesi: FR16KR05.pdf; RFQ

: GHIS100A120S1-E1; Proizvajalci: Global Power Technologies Group; Opis: SI IGBT/ SIC SBD HYBRID MODULE S; Na zalogi: 1034 pcs; Prenesi: GHIS100A120S1-E1.pdf; RFQ

: S25QR; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN REV 1.2KV 25A DO203AA; Na zalogi: 17370 pcs; Prenesi: S25QR.pdf; RFQ

: FR6BR02; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 100V 6A DO4; Na zalogi: 20454 pcs; Prenesi: FR6BR02.pdf; RFQ

: GSXF030A040S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE FAST REC 400V 30A SOT227; Na zalogi: 7511 pcs; Prenesi: GSXF030A040S1-D3.pdf; RFQ

: 1N1204A; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 400V 12A DO4; Na zalogi: 33303 pcs; Prenesi: 1N1204A.pdf; RFQ

: GP2M013A050F; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 500V 13A TO220F; Na zalogi: 5620 pcs; Prenesi: GP2M013A050F.pdf; RFQ

: GPA030A135MN-FDR; Proizvajalci: Global Power Technologies Group; Opis: IGBT 1350V 60A 329W TO3PN; Na zalogi: 36205 pcs; Prenesi: GPA030A135MN-FDR.pdf; RFQ

: S6KR; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 800V 6A DO4; Na zalogi: 22797 pcs; Prenesi: S6KR.pdf; RFQ

: GSXD120A008S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 80V 120A SOT227; Na zalogi: 5908 pcs; Prenesi: GSXD120A008S1-D3.pdf; RFQ

: GSXF060A020S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE FAST REC 200V 60A SOT227; Na zalogi: 6601 pcs; Prenesi: GSXF060A020S1-D3.pdf; RFQ

: GHXS045A120S-D1; Proizvajalci: Global Power Technologies Group; Opis: MOD SBD BRIDGE 1200V 45A SOT227; Na zalogi: 638 pcs; Prenesi: GHXS045A120S-D1.pdf; RFQ

: GP2M008A060PG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 600V 7.5A IPAK; Na zalogi: 5825 pcs; Prenesi: GP2M008A060PG.pdf; RFQ

: GKN71/16; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 1.6KV 95A DO5; Na zalogi: 15198 pcs; Prenesi: GKN71/16.pdf; RFQ

: GKR26/04; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 400V 25A DO4; Na zalogi: 26308 pcs; Prenesi: GKR26/04.pdf; RFQ

: GHXS010A060S-D1E; Proizvajalci: Global Power Technologies Group; Opis: MOD SBD BRIDGE 600V 10A SOT227; Na zalogi: 2798 pcs; Prenesi: GHXS010A060S-D1E.pdf; RFQ

: 1N1204AR; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 400V 12A DO4; Na zalogi: 35472 pcs; Prenesi: 1N1204AR.pdf; RFQ

: S70B; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 100V 70A DO5; Na zalogi: 13606 pcs; Prenesi: S70B.pdf; RFQ

: GCMS010A120S7B1; Proizvajalci: Global Power Technologies Group; Opis: SIC MOSFET/SBD HALF BRIDGE MODUL; Na zalogi: 153 pcs; Prenesi: GCMS010A120S7B1.pdf; RFQ

: GP1M003A040CG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 400V 2A DPAK; Na zalogi: 4286 pcs; Prenesi: GP1M003A040CG.pdf; RFQ

: S40JR; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 600V 40A DO5; Na zalogi: 14984 pcs; Prenesi: S40JR.pdf; RFQ

: GP1M009A090H; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 900V 9A TO220; Na zalogi: 5827 pcs; Prenesi: GP1M009A090H.pdf; RFQ

: 1N3768; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 1KV 35A DO5; Na zalogi: 12483 pcs; Prenesi: 1N3768.pdf; RFQ

: FR12DR05; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 200V 12A DO4; Na zalogi: 23932 pcs; Prenesi: FR12DR05.pdf; RFQ

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