Global Power Technologies Group Distributer | Distributer elektronskih komponent Global Power Technologies Group - Ocean-Components.com

Global Power Technologies Group: - Global Power Technologies Group, Inc. ("GPTG"), ustanovljena leta 2007, je integrirano podjetje za razvoj in proizvodnjo, namenjeno izdelkom na osnovi tehnologij Silicon Carbide (SiC). Ti izdelki bodo v prihodnjih letih osnova za elektroenergetsko in energetsko industrijo, kjer so potrebne napredne tehnologije za nizkocenovno, visoko učinkovito proizvodnjo, pretvorbo in prenos energije.

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Podobni izdelki

: GP1M011A050FSH; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 500V 10A TO220F; Na zalogi: 4217 pcs; Prenesi: GP1M011A050FSH.pdf; RFQ

: GSXD060A010S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 100V 60A SOT227; Na zalogi: 9777 pcs; Prenesi: GSXD060A010S1-D3.pdf; RFQ

: MUR2505; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 50V 25A DO4; Na zalogi: 14771 pcs; Prenesi: MUR2505.pdf; RFQ

: GHXS060A120S-D4; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOT SBD 1200V 60A SOT227; Na zalogi: 852 pcs; Prenesi: GHXS060A120S-D4.pdf; RFQ

: GP1M018A020FG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 200V 18A TO220F; Na zalogi: 4004 pcs; Prenesi: GP1M018A020FG.pdf; RFQ

: 1N3767; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 900V 35A DO5; Na zalogi: 14274 pcs; Prenesi: 1N3767.pdf; RFQ

: GP1M010A080FH; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 800V 9.5A TO220F; Na zalogi: 5881 pcs; Prenesi: GP1M010A080FH.pdf; RFQ

: GP1M010A080N; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 900V 10A TO3PN; Na zalogi: 4522 pcs; Prenesi: GP1M010A080N.pdf; RFQ

: GP2M007A065HG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 650V 6.5A TO220; Na zalogi: 4830 pcs; Prenesi: GP2M007A065HG.pdf; RFQ

: GP2D003A065C; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 650V 3A TO252-2; Na zalogi: 98373 pcs; Prenesi: GP2D003A065C.pdf; RFQ

: 1N1190R; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 600V 35A DO5; Na zalogi: 23157 pcs; Prenesi: 1N1190R.pdf; RFQ

: S6M; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 1KV 6A DO4; Na zalogi: 18382 pcs; Prenesi: S6M.pdf; RFQ

: GP2M002A060CG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 600V 2A DPAK; Na zalogi: 4109 pcs; Prenesi: GP2M002A060CG.pdf; RFQ

: FR20BR02; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 100V 20A DO5; Na zalogi: 13705 pcs; Prenesi: FR20BR02.pdf; RFQ

: 1N1184A; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 100V 40A DO5; Na zalogi: 28851 pcs; Prenesi: 1N1184A.pdf; RFQ

: GCMS040A120B1H1; Proizvajalci: Global Power Technologies Group; Opis: SIC MOSFET FULL BRIDGE MODULE B1; Na zalogi: 264 pcs; Prenesi: GCMS040A120B1H1.pdf; RFQ

: GP2M023A050N; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 500V 23A TO3PN; Na zalogi: 5200 pcs; Prenesi: GP2M023A050N.pdf; RFQ

: GHXS030A060S-D4; Proizvajalci: Global Power Technologies Group; Opis: DIODE SBD SHOTT 600V 30A SOT227; Na zalogi: 2937 pcs; Prenesi: GHXS030A060S-D4.pdf; RFQ

: GP2D030A120B; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 1.2KV 30A TO247-2; Na zalogi: 5568 pcs; Prenesi: GP2D030A120B.pdf; RFQ

: GPA042A100L-ND; Proizvajalci: Global Power Technologies Group; Opis: IGBT 1000V 60A 463W TO264; Na zalogi: 33345 pcs; Prenesi: GPA042A100L-ND.pdf; RFQ

: S12MR; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 1KV 12A DO4; Na zalogi: 24846 pcs; Prenesi: S12MR.pdf; RFQ

: MUR2520; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 200V 25A DO4; Na zalogi: 12335 pcs; Prenesi: MUR2520.pdf; RFQ

: FR6BR05; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 100V 16A DO4; Na zalogi: 16360 pcs; Prenesi: FR6BR05.pdf; RFQ

: 1N1183; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 50V 35A DO203AB; Na zalogi: 12749 pcs; Prenesi: 1N1183.pdf; RFQ

: S16Q; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 1.2KV 16A DO203AA; Na zalogi: 18380 pcs; Prenesi: S16Q.pdf; RFQ

: GP2D010A170B; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 1.7KV 10A TO247-2; Na zalogi: 5816 pcs; Prenesi:; RFQ

: GHXS015A120S-D1; Proizvajalci: Global Power Technologies Group; Opis: MOD SBD BRIDGE 1200V 15A SOT227; Na zalogi: 1568 pcs; Prenesi: GHXS015A120S-D1.pdf; RFQ

: FST12035; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE MODULE 35V 120A TO249AB; Na zalogi: 2193 pcs; Prenesi: FST12035.pdf; RFQ

: 1N3766R; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 800V 35A DO5; Na zalogi: 12093 pcs; Prenesi: 1N3766R.pdf; RFQ

: FR16D02; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 200V 16A DO4; Na zalogi: 21068 pcs; Prenesi: FR16D02.pdf; RFQ

: FST12030; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE MODULE 30V 120A TO249AB; Na zalogi: 1852 pcs; Prenesi: FST12030.pdf; RFQ

: GP2M004A060CG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 600V 4A DPAK; Na zalogi: 4350 pcs; Prenesi: GP2M004A060CG.pdf; RFQ

: GSXD080A012S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 120V 80A SOT227; Na zalogi: 7423 pcs; Prenesi: GSXD080A012S1-D3.pdf; RFQ

: GSID300A125S5C1; Proizvajalci: Global Power Technologies Group; Opis: IGBT MODULE 1250V 600A CHASSIS; Na zalogi: 310 pcs; Prenesi: GSID300A125S5C1.pdf; RFQ

: 1N3880R; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 100V 6A DO4; Na zalogi: 20912 pcs; Prenesi: 1N3880R.pdf; RFQ

: FR20AR02; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 50V 20A DO5; Na zalogi: 13360 pcs; Prenesi: FR20AR02.pdf; RFQ

: S40BR; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 100V 40A DO5; Na zalogi: 20832 pcs; Prenesi: S40BR.pdf; RFQ

: GP2M007A080F; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 800V 7A TO220F; Na zalogi: 5538 pcs; Prenesi: GP2M007A080F.pdf; RFQ

: GP1M003A080CH; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 800V 3A DPAK; Na zalogi: 5105 pcs; Prenesi: GP1M003A080CH.pdf; RFQ

: GP1M013A050H; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 500V 13A TO220; Na zalogi: 4508 pcs; Prenesi: GP1M013A050H.pdf; RFQ

: GSXD100A004S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 45V 100A SOT227; Na zalogi: 7560 pcs; Prenesi: GSXD100A004S1-D3.pdf; RFQ

: GP2D008A120C; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHTKY 1.2KV 24A TO252-2L; Na zalogi: 17813 pcs; Prenesi: GP2D008A120C.pdf; RFQ

: GSXD160A015S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 150V 320A SOT227; Na zalogi: 4633 pcs; Prenesi: GSXD160A015S1-D3.pdf; RFQ

: FR6AR05; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 50V 16A DO4; Na zalogi: 23273 pcs; Prenesi: FR6AR05.pdf; RFQ

: GP1M011A050H; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 500V 11A TO220; Na zalogi: 5922 pcs; Prenesi: GP1M011A050H.pdf; RFQ

: GSXD050A006S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 60V 50A SOT227; Na zalogi: 9334 pcs; Prenesi: GSXD050A006S1-D3.pdf; RFQ

: GP2D020A065U; Proizvajalci: Global Power Technologies Group; Opis: DIODE ARRAY SCHOTTKY 650V TO247; Na zalogi: 14359 pcs; Prenesi: GP2D020A065U.pdf; RFQ

: 1N1199AR; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 50V 12A DO4; Na zalogi: 35017 pcs; Prenesi: 1N1199AR.pdf; RFQ

: GP1M013A050FH; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 500V 13A TO220F; Na zalogi: 4924 pcs; Prenesi: GP1M013A050FH.pdf; RFQ

: MUR2505R; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 50V 25A DO4; Na zalogi: 12634 pcs; Prenesi: MUR2505R.pdf; RFQ

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