Global Power Technologies Group Distributer | Distributer elektronskih komponent Global Power Technologies Group - Ocean-Components.com

Global Power Technologies Group: - Global Power Technologies Group, Inc. ("GPTG"), ustanovljena leta 2007, je integrirano podjetje za razvoj in proizvodnjo, namenjeno izdelkom na osnovi tehnologij Silicon Carbide (SiC). Ti izdelki bodo v prihodnjih letih osnova za elektroenergetsko in energetsko industrijo, kjer so potrebne napredne tehnologije za nizkocenovno, visoko učinkovito proizvodnjo, pretvorbo in prenos energije.

Obrazec za zahtevo >

Podobni izdelki

: GP1M009A020CG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 200V 9A DPAK; Na zalogi: 4343 pcs; Prenesi: GP1M009A020CG.pdf; RFQ

: GP2D006A060C; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 600V 6A TO252-2; Na zalogi: 37794 pcs; Prenesi: GP2D006A060C.pdf; RFQ

: 1N3210R; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 200V 15A DO5; Na zalogi: 22750 pcs; Prenesi: 1N3210R.pdf; RFQ

: FST12080; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE MODULE 80V 120A TO249AB; Na zalogi: 2083 pcs; Prenesi: FST12080.pdf; RFQ

: GP2D012A065C; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 650V 29A TO252-2; Na zalogi: 32057 pcs; Prenesi: GP2D012A065C.pdf; RFQ

: 1N1206A; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 600V 12A DO4; Na zalogi: 23380 pcs; Prenesi: 1N1206A.pdf; RFQ

: GCMS012A120S1-E1; Proizvajalci: Global Power Technologies Group; Opis: SIC MOSFET/ SBD MODULE SOT-227 C; Na zalogi: 387 pcs; Prenesi: GCMS012A120S1-E1.pdf; RFQ

: GP1M012A060FH; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 600V 12A TO220F; Na zalogi: 5328 pcs; Prenesi: GP1M012A060FH.pdf; RFQ

: GSXD050A004S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 45V 50A SOT227; Na zalogi: 9085 pcs; Prenesi: GSXD050A004S1-D3.pdf; RFQ

: GP1M003A090C; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 900V 2.5A DPAK; Na zalogi: 4517 pcs; Prenesi: GP1M003A090C.pdf; RFQ

: 1N3766; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 800V 35A DO5; Na zalogi: 13417 pcs; Prenesi: 1N3766.pdf; RFQ

: S16K; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 800V 16A DO203AA; Na zalogi: 22495 pcs; Prenesi: S16K.pdf; RFQ

: S16B; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 100V 16A DO203AA; Na zalogi: 28306 pcs; Prenesi: S16B.pdf; RFQ

: FR40BR02; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 100V 40A DO5; Na zalogi: 16778 pcs; Prenesi: FR40BR02.pdf; RFQ

: FR30KR05; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 800V 30A DO5; Na zalogi: 13676 pcs; Prenesi: FR30KR05.pdf; RFQ

: GDP60Y120B; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 1200V 30A TO247-3; Na zalogi: 5841 pcs; Prenesi: GDP60Y120B.pdf; RFQ

: GSXD080A020S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE 200V 80A SOT227; Na zalogi: 7294 pcs; Prenesi: GSXD080A020S1-D3.pdf; RFQ

: GSXD080A015S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 150V 80A SOT227; Na zalogi: 6813 pcs; Prenesi: GSXD080A015S1-D3.pdf; RFQ

: GSXF060A060S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE FAST REC 600V 60A SOT22; Na zalogi: 6561 pcs; Prenesi: GSXF060A060S1-D3.pdf; RFQ

: FR12D05; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 200V 12A DO4; Na zalogi: 21394 pcs; Prenesi: FR12D05.pdf; RFQ

: GHXS010A060S-D4; Proizvajalci: Global Power Technologies Group; Opis: DIODE SBD SCHOTT 600V 10A SOT227; Na zalogi: 5192 pcs; Prenesi: GHXS010A060S-D4.pdf; RFQ

: GSID150A120S5C1; Proizvajalci: Global Power Technologies Group; Opis: IGBT MODULE 1200V 285A; Na zalogi: 617 pcs; Prenesi: GSID150A120S5C1.pdf; RFQ

: 1N1189R; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 600V 35A DO5; Na zalogi: 12766 pcs; Prenesi: 1N1189R.pdf; RFQ

: FR16B05; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 100V 16A DO4; Na zalogi: 17556 pcs; Prenesi: FR16B05.pdf; RFQ

: GSXF030A060S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE FAST REC 600V 30A SOT227; Na zalogi: 8358 pcs; Prenesi: GSXF030A060S1-D3.pdf; RFQ

: GP2M004A065HG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 650V 4A TO220; Na zalogi: 3993 pcs; Prenesi: GP2M004A065HG.pdf; RFQ

: GSXF030A120S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE FAST REC 1200V 30A SOT227; Na zalogi: 7467 pcs; Prenesi: GSXF030A120S1-D3.pdf; RFQ

: FR12D02; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 200V 12A DO4; Na zalogi: 19887 pcs; Prenesi: FR12D02.pdf; RFQ

: GP2M004A065PG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 650V 4A IPAK; Na zalogi: 4340 pcs; Prenesi: GP2M004A065PG.pdf; RFQ

: FR6M05; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 1KV 6A DO4; Na zalogi: 16323 pcs; Prenesi: FR6M05.pdf; RFQ

: 1N1186R; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 200V 35A DO5; Na zalogi: 21121 pcs; Prenesi: 1N1186R.pdf; RFQ

: FR6G02; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 400V 6A DO4; Na zalogi: 17205 pcs; Prenesi: FR6G02.pdf; RFQ

: 1N3671AR; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 800V 12A DO4; Na zalogi: 18869 pcs; Prenesi: 1N3671AR.pdf; RFQ

: FR16DR02; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 200V 16A DO4; Na zalogi: 23154 pcs; Prenesi: FR16DR02.pdf; RFQ

: GAP05SLT80-220; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE SCHOTTKY 8KV 50MA AXIAL; Na zalogi: 282 pcs; Prenesi: GAP05SLT80-220.pdf; RFQ

: GP1M009A050HS; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 500V 8.5A TO220; Na zalogi: 5202 pcs; Prenesi: GP1M009A050HS.pdf; RFQ

: GHIS040A120S-A2; Proizvajalci: Global Power Technologies Group; Opis: IGBT BUCK CHOP 1200V 80A SOT227; Na zalogi: 3357 pcs; Prenesi: GHIS040A120S-A2.pdf; RFQ

: S25B; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 100V 25A DO203AA; Na zalogi: 21361 pcs; Prenesi: S25B.pdf; RFQ

: GP1M006A065PH; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 650V 5.5A IPAK; Na zalogi: 5283 pcs; Prenesi: GP1M006A065PH.pdf; RFQ

: GSXF120A020S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE FAST REC 200V 120A SOT227; Na zalogi: 7168 pcs; Prenesi: GSXF120A020S1-D3.pdf; RFQ

: GP1M005A050FH; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 500V 4.5A TO220F; Na zalogi: 5507 pcs; Prenesi: GP1M005A050FH.pdf; RFQ

: FR12B02; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 100V 12A DO4; Na zalogi: 20225 pcs; Prenesi: FR12B02.pdf; RFQ

: S6QR; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 1.2KV 6A DO4; Na zalogi: 20554 pcs; Prenesi: S6QR.pdf; RFQ

: FR20M05; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 1KV 20A DO5; Na zalogi: 12216 pcs; Prenesi: FR20M05.pdf; RFQ

: GHXS050A170S-D3; Proizvajalci: Global Power Technologies Group; Opis: 1700V 50A SIC SBD PARALLEL; Na zalogi: 571 pcs; Prenesi: GHXS050A170S-D3.pdf; RFQ

: S16J; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 600V 16A DO203AA; Na zalogi: 16760 pcs; Prenesi: S16J.pdf; RFQ

: GP1M003A090PH; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 900V 2.5A IPAK; Na zalogi: 5290 pcs; Prenesi: GP1M003A090PH.pdf; RFQ

: GSXD160A018S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 180V 160A SOT227; Na zalogi: 4037 pcs; Prenesi: GSXD160A018S1-D3.pdf; RFQ

: FR12GR02; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 400V 12A DO4; Na zalogi: 19442 pcs; Prenesi: FR12GR02.pdf; RFQ

: 1N3891R; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 200V 12A DO4; Na zalogi: 21495 pcs; Prenesi: 1N3891R.pdf; RFQ

Izberite svojo državo ali regijo.

Kategorija izdelka

Sorodne novice

Podobni izdelki