Global Power Technologies Group Distributer | Distributer elektronskih komponent Global Power Technologies Group - Ocean-Components.com

Global Power Technologies Group: - Global Power Technologies Group, Inc. ("GPTG"), ustanovljena leta 2007, je integrirano podjetje za razvoj in proizvodnjo, namenjeno izdelkom na osnovi tehnologij Silicon Carbide (SiC). Ti izdelki bodo v prihodnjih letih osnova za elektroenergetsko in energetsko industrijo, kjer so potrebne napredne tehnologije za nizkocenovno, visoko učinkovito proizvodnjo, pretvorbo in prenos energije.

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Podobni izdelki

: 1N2133A; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 300V 60A DO5; Na zalogi: 13732 pcs; Prenesi: 1N2133A.pdf; RFQ

: GP1M009A020HG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 200V 9A TO220; Na zalogi: 5393 pcs; Prenesi: GP1M009A020HG.pdf; RFQ

: GHIS080A060S-A2; Proizvajalci: Global Power Technologies Group; Opis: IGBT BUCK CHOP 600V 160A SOT227; Na zalogi: 3239 pcs; Prenesi: GHIS080A060S-A2.pdf; RFQ

: FR6GR02; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 400V 6A DO4; Na zalogi: 20157 pcs; Prenesi: FR6GR02.pdf; RFQ

: FR6D02; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 200V 6A DO4; Na zalogi: 19742 pcs; Prenesi: FR6D02.pdf; RFQ

: S40M; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 1KV 40A DO5; Na zalogi: 14822 pcs; Prenesi: S40M.pdf; RFQ

: FR16G02; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 400V 16A DO4; Na zalogi: 17015 pcs; Prenesi: FR16G02.pdf; RFQ

: GP1M016A025CG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 250V 16A DPAK; Na zalogi: 4460 pcs; Prenesi: GP1M016A025CG.pdf; RFQ

: MBRT20030; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE MODULE 30V 200A 3TOWER; Na zalogi: 2155 pcs; Prenesi: MBRT20030.pdf; RFQ

: S25M; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 1KV 25A DO203AA; Na zalogi: 19922 pcs; Prenesi: S25M.pdf; RFQ

: 1N3893; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 600V 12A DO4; Na zalogi: 16982 pcs; Prenesi: 1N3893.pdf; RFQ

: 1N2133AR; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 300V 60A DO5; Na zalogi: 14433 pcs; Prenesi: 1N2133AR.pdf; RFQ

: GHIS060A120S-A1; Proizvajalci: Global Power Technologies Group; Opis: IGBT BOOST CHP 1200V 120A SOT227; Na zalogi: 3320 pcs; Prenesi: GHIS060A120S-A1.pdf; RFQ

: FR6MR05; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 1KV 6A DO4; Na zalogi: 15526 pcs; Prenesi: FR6MR05.pdf; RFQ

: GHIS025A120T1P2; Proizvajalci: Global Power Technologies Group; Opis: SI IGBT & SIC SBD HYBRID MODULES; Na zalogi: 1029 pcs; Prenesi: GHIS025A120T1P2.pdf; RFQ

: 1N3890; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 100V 12A DO4; Na zalogi: 18745 pcs; Prenesi: 1N3890.pdf; RFQ

: 1N3882; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 300V 6A DO4; Na zalogi: 20512 pcs; Prenesi: 1N3882.pdf; RFQ

: GSXD060A015S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 150V 60A SOT227; Na zalogi: 6002 pcs; Prenesi: GSXD060A015S1-D3.pdf; RFQ

: GPA020A135MN-FD; Proizvajalci: Global Power Technologies Group; Opis: IGBT 1350V 40A 223W TO3PN; Na zalogi: 30452 pcs; Prenesi: GPA020A135MN-FD.pdf; RFQ

: GHIS030A060B1P2; Proizvajalci: Global Power Technologies Group; Opis: SI IGBT & SIC SBD HYBRID MODULES; Na zalogi: 1860 pcs; Prenesi: GHIS030A060B1P2.pdf; RFQ

: GHIS080A120S-A2; Proizvajalci: Global Power Technologies Group; Opis: IGBT BUCK CHOP 1200V 160A SOT227; Na zalogi: 1787 pcs; Prenesi: GHIS080A120S-A2.pdf; RFQ

: FR30K05; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 800V 30A DO5; Na zalogi: 11751 pcs; Prenesi: FR30K05.pdf; RFQ

: GP2M009A090NG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 900V 9A TO3PN; Na zalogi: 5264 pcs; Prenesi: GP2M009A090NG.pdf; RFQ

: S25KR; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN REV 800V 25A DO203AA; Na zalogi: 19671 pcs; Prenesi: S25KR.pdf; RFQ

: GP2M008A060FGH; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 600V 7.5A TO220F; Na zalogi: 4748 pcs; Prenesi: GP2M008A060FGH.pdf; RFQ

: 1N3767R; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 900V 35A DO5; Na zalogi: 14671 pcs; Prenesi: 1N3767R.pdf; RFQ

: GP2M005A050FG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 500V 4.5A TO220F; Na zalogi: 5846 pcs; Prenesi: GP2M005A050FG.pdf; RFQ

: 1N1188AR; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 400V 40A DO5; Na zalogi: 19183 pcs; Prenesi: 1N1188AR.pdf; RFQ

: GP2D024A060U; Proizvajalci: Global Power Technologies Group; Opis: DIODE ARRAY SCHOTTKY 600V TO247; Na zalogi: 26843 pcs; Prenesi: GP2D024A060U.pdf; RFQ

: GHXS030A060S-D1E; Proizvajalci: Global Power Technologies Group; Opis: MOD SBD BRIDGE 600V 30A SOT227; Na zalogi: 1640 pcs; Prenesi: GHXS030A060S-D1E.pdf; RFQ

: GCMS040A120B3C1; Proizvajalci: Global Power Technologies Group; Opis: SIC MOSFET 6-PACK MODULE B2_EASY; Na zalogi: 163 pcs; Prenesi: GCMS040A120B3C1.pdf; RFQ

: GP2M020A060N; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 600V 20A TO3PN; Na zalogi: 4318 pcs; Prenesi: GP2M020A060N.pdf; RFQ

: GHXS045A120S-D4; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOT SBD 1200V 45A SOT227; Na zalogi: 1125 pcs; Prenesi: GHXS045A120S-D4.pdf; RFQ

: 1N3211R; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 300V 15A DO5; Na zalogi: 19338 pcs; Prenesi: 1N3211R.pdf; RFQ

: GP2M005A060HG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 600V 4.2A TO220; Na zalogi: 5085 pcs; Prenesi: GP2M005A060HG.pdf; RFQ

: 1N1190; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 600V 35A DO5; Na zalogi: 15653 pcs; Prenesi: 1N1190.pdf; RFQ

: GP1M004A090H; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 900V 4A TO220; Na zalogi: 5199 pcs; Prenesi: GP1M004A090H.pdf; RFQ

: FR16GR02; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 400V 16A DO4; Na zalogi: 16819 pcs; Prenesi: FR16GR02.pdf; RFQ

: GHIS060A120S-A2; Proizvajalci: Global Power Technologies Group; Opis: IGBT BUCK CHOP 1200V 120A SOT227; Na zalogi: 2395 pcs; Prenesi: GHIS060A120S-A2.pdf; RFQ

: GSID100A120T2C1; Proizvajalci: Global Power Technologies Group; Opis: SILICON IGBT MODULES; Na zalogi: 742 pcs; Prenesi: GSID100A120T2C1.pdf; RFQ

: S12GR; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 400V 12A DO4; Na zalogi: 45636 pcs; Prenesi: S12GR.pdf; RFQ

: FR16JR05; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 600V 16A DO4; Na zalogi: 17803 pcs; Prenesi: FR16JR05.pdf; RFQ

: GP1M008A025HG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 250V 8A TO220; Na zalogi: 4884 pcs; Prenesi: GP1M008A025HG.pdf; RFQ

: GP2M010A065F; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 650V 9.5A TO220F; Na zalogi: 4799 pcs; Prenesi: GP2M010A065F.pdf; RFQ

: S16M; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 1KV 16A DO203AA; Na zalogi: 15774 pcs; Prenesi: S16M.pdf; RFQ

: GP1M005A040CG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 400V 3.4A DPAK; Na zalogi: 4218 pcs; Prenesi: GP1M005A040CG.pdf; RFQ

: 1N2130A; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 150V 60A DO5; Na zalogi: 19529 pcs; Prenesi: 1N2130A.pdf; RFQ

: FR6GR05; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 400V 16A DO4; Na zalogi: 15982 pcs; Prenesi: FR6GR05.pdf; RFQ

: 1N3208; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 50V 15A DO5; Na zalogi: 14689 pcs; Prenesi: 1N3208.pdf; RFQ

: GHIS030A060B2P2; Proizvajalci: Global Power Technologies Group; Opis: SI IGBT & SIC SBD HYBRID MODULES; Na zalogi: 1821 pcs; Prenesi: GHIS030A060B2P2.pdf; RFQ

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