Global Power Technologies Group Distributer | Distributer elektronskih komponent Global Power Technologies Group - Ocean-Components.com

Global Power Technologies Group: - Global Power Technologies Group, Inc. ("GPTG"), ustanovljena leta 2007, je integrirano podjetje za razvoj in proizvodnjo, namenjeno izdelkom na osnovi tehnologij Silicon Carbide (SiC). Ti izdelki bodo v prihodnjih letih osnova za elektroenergetsko in energetsko industrijo, kjer so potrebne napredne tehnologije za nizkocenovno, visoko učinkovito proizvodnjo, pretvorbo in prenos energije.

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Podobni izdelki

: GHXS010A060S-D1; Proizvajalci: Global Power Technologies Group; Opis: MOD SBD BRIDGE 600V 10A SOT227; Na zalogi: 3577 pcs; Prenesi: GHXS010A060S-D1.pdf; RFQ

: GP1M005A050HS; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 500V 4A TO220; Na zalogi: 4369 pcs; Prenesi: GP1M005A050HS.pdf; RFQ

: FR16K05; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 800V 16A DO4; Na zalogi: 19039 pcs; Prenesi: FR16K05.pdf; RFQ

: FR6AR02; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 50V 6A DO4; Na zalogi: 19860 pcs; Prenesi: FR6AR02.pdf; RFQ

: FR20D02; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 200V 20A DO5; Na zalogi: 13850 pcs; Prenesi: FR20D02.pdf; RFQ

: FR40D02; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 200V 40A DO5; Na zalogi: 13323 pcs; Prenesi: FR40D02.pdf; RFQ

: GSXF120A040S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE FAST REC 400V 120A SOT227; Na zalogi: 7634 pcs; Prenesi: GSXF120A040S1-D3.pdf; RFQ

: GP2D005A170B; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 1700V 5A TO247-2; Na zalogi: 13864 pcs; Prenesi: GP2D005A170B.pdf; RFQ

: GHIS080A120S-A1; Proizvajalci: Global Power Technologies Group; Opis: IGBT BOOST CHP 1200V 160A SOT227; Na zalogi: 2104 pcs; Prenesi: GHIS080A120S-A1.pdf; RFQ

: GSXF100A020S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE FAST REC 200V 120AA SOT227; Na zalogi: 7613 pcs; Prenesi: GSXF100A020S1-D3.pdf; RFQ

: 1N8031-GA; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE SCHOTTKY 650V 1A TO276; Na zalogi: 513 pcs; Prenesi: 1N8031-GA.pdf; RFQ

: GP1M008A050HG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 500V 8A TO220; Na zalogi: 4520 pcs; Prenesi: GP1M008A050HG.pdf; RFQ

: FR6A05; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 50V 16A DO4; Na zalogi: 18153 pcs; Prenesi: FR6A05.pdf; RFQ

: FR30BR02; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 100V 30A DO5; Na zalogi: 15023 pcs; Prenesi: FR30BR02.pdf; RFQ

: GHIS020A060B1P2; Proizvajalci: Global Power Technologies Group; Opis: SI IGBT & SIC SBD HYBRID MODULES; Na zalogi: 2309 pcs; Prenesi: GHIS020A060B1P2.pdf; RFQ

: GKN26/08; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 800V 25A DO4; Na zalogi: 18915 pcs; Prenesi: GKN26/08.pdf; RFQ

: 1N2135A; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 400V 60A DO5; Na zalogi: 13918 pcs; Prenesi: 1N2135A.pdf; RFQ

: GKN26/12; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 1.2KV 25A DO4; Na zalogi: 16792 pcs; Prenesi: GKN26/12.pdf; RFQ

: S16MR; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN REV 1KV 16A DO203AA; Na zalogi: 15406 pcs; Prenesi: S16MR.pdf; RFQ

: GKN71/14; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 1.4KV 95A DO5; Na zalogi: 20656 pcs; Prenesi: GKN71/14.pdf; RFQ

: FR12J02; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 600V 12A DO4; Na zalogi: 19781 pcs; Prenesi: FR12J02.pdf; RFQ

: GCMS080A120S1-E1; Proizvajalci: Global Power Technologies Group; Opis: SIC MOSFET/ SBD MODULE SOT-227 C; Na zalogi: 1801 pcs; Prenesi: GCMS080A120S1-E1.pdf; RFQ

: FR40B02; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 100V 40A DO5; Na zalogi: 13586 pcs; Prenesi: FR40B02.pdf; RFQ

: 1N3213R; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 500V 15A DO5; Na zalogi: 11319 pcs; Prenesi: 1N3213R.pdf; RFQ

: GHIS080A060S1-E1; Proizvajalci: Global Power Technologies Group; Opis: IGBT 600V 160A SOT227; Na zalogi: 3744 pcs; Prenesi: GHIS080A060S1-E1.pdf; RFQ

: FST10040; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE MODULE 40V 100A TO249AB; Na zalogi: 2097 pcs; Prenesi: FST10040.pdf; RFQ

: GSXD300A170S2D5; Proizvajalci: Global Power Technologies Group; Opis: DIODE GP 1.7KV 300A ADD-A-PAK; Na zalogi: 1795 pcs; Prenesi: GSXD300A170S2D5.pdf; RFQ

: GP1M008A080H; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 800V 8A TO220; Na zalogi: 5787 pcs; Prenesi: GP1M008A080H.pdf; RFQ

: GSXD060A006S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 60V 60A SOT227; Na zalogi: 7414 pcs; Prenesi: GSXD060A006S1-D3.pdf; RFQ

: GHXS045A120S-D1E; Proizvajalci: Global Power Technologies Group; Opis: MOD SBD BRIDGE 1200V 45A SOT227; Na zalogi: 741 pcs; Prenesi: GHXS045A120S-D1E.pdf; RFQ

: FR6D05; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 200V 16A DO4; Na zalogi: 16489 pcs; Prenesi: FR6D05.pdf; RFQ

: GP1M005A040PG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 400V 3.4A IPAK; Na zalogi: 4140 pcs; Prenesi: GP1M005A040PG.pdf; RFQ

: GHIS080A060S-A1; Proizvajalci: Global Power Technologies Group; Opis: IGBT BOOST CHOP 600V 160A SOT227; Na zalogi: 3089 pcs; Prenesi: GHIS080A060S-A1.pdf; RFQ

: 1N2135AR; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 400V 60A DO5; Na zalogi: 12519 pcs; Prenesi: 1N2135AR.pdf; RFQ

: GP2M004A065FG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 650V 4A TO220F; Na zalogi: 5070 pcs; Prenesi: GP2M004A065FG.pdf; RFQ

: GP2M005A060CG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 600V 4.2A DPAK; Na zalogi: 4757 pcs; Prenesi: GP2M005A060CG.pdf; RFQ

: 1N3673A; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 1KV 12A DO4; Na zalogi: 17502 pcs; Prenesi: 1N3673A.pdf; RFQ

: 1N2137AR; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 500V 60A DO5; Na zalogi: 12844 pcs; Prenesi: 1N2137AR.pdf; RFQ

: GSXD100A010S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 100V 100A SOT227; Na zalogi: 6823 pcs; Prenesi: GSXD100A010S1-D3.pdf; RFQ

: GSXD060A018S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 180V 60A SOT227; Na zalogi: 6401 pcs; Prenesi: GSXD060A018S1-D3.pdf; RFQ

: GSID300A120S5C1; Proizvajalci: Global Power Technologies Group; Opis: IGBT MODULE 1200V 430A; Na zalogi: 287 pcs; Prenesi: GSID300A120S5C1.pdf; RFQ

: FR12GR05; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 400V 12A DO4; Na zalogi: 19317 pcs; Prenesi: FR12GR05.pdf; RFQ

: GP1M003A050HG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 500V 2.5A TO220; Na zalogi: 4087 pcs; Prenesi: GP1M003A050HG.pdf; RFQ

: GP2D005A060A; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 600V 15A TO220-2; Na zalogi: 51573 pcs; Prenesi: GP2D005A060A.pdf; RFQ

: GHIS030A120S-A1; Proizvajalci: Global Power Technologies Group; Opis: IGBT BOOST CHOP 1200V 60A SOT227; Na zalogi: 3859 pcs; Prenesi: GHIS030A120S-A1.pdf; RFQ

: FST16030; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE MODULE 30V 160A TO249AB; Na zalogi: 1752 pcs; Prenesi: FST16030.pdf; RFQ

: GP2D020A120A; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 1.2KV 20A TO220-2; Na zalogi: 5049 pcs; Prenesi: GP2D020A120A.pdf; RFQ

: FR6DR05; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 200V 16A DO4; Na zalogi: 19785 pcs; Prenesi: FR6DR05.pdf; RFQ

: 1N1184R; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 100V 35A DO5; Na zalogi: 16931 pcs; Prenesi: 1N1184R.pdf; RFQ

: GP2D012A060A; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 600V 12A TO220-2; Na zalogi: 24903 pcs; Prenesi: GP2D012A060A.pdf; RFQ

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