Global Power Technologies Group Distributer | Distributer elektronskih komponent Global Power Technologies Group

Global Power Technologies Group: - Global Power Technologies Group, Inc. ("GPTG"), ustanovljena leta 2007, je integrirano podjetje za razvoj in proizvodnjo, namenjeno izdelkom na osnovi tehnologij Silicon Carbide (SiC). Ti izdelki bodo v prihodnjih letih osnova za elektroenergetsko in energetsko industrijo, kjer so potrebne napredne tehnologije za nizkocenovno, visoko učinkovito proizvodnjo, pretvorbo in prenos energije.

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Podobni izdelki

: GSXD060A004S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 45V 60A SOT227; Na zalogi: 10764 pcs; Prenesi: GSXD060A004S1-D3.pdf; RFQ

: FST12040; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE MODULE 40V 120A TO249AB; Na zalogi: 2035 pcs; Prenesi: FST12040.pdf; RFQ

: 1N8028-GA; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE SCHOTTKY 1.2KV 9.4A TO257; Na zalogi: 512 pcs; Prenesi: 1N8028-GA.pdf; RFQ

: GSXF030A020S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE FAST REC 200V 30A SOT227; Na zalogi: 8100 pcs; Prenesi: GSXF030A020S1-D3.pdf; RFQ

: GP2M002A060HG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 600V 2A TO220; Na zalogi: 5970 pcs; Prenesi: GP2M002A060HG.pdf; RFQ

: GP1M018A020PG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 200V 18A IPAK; Na zalogi: 79971 pcs; Prenesi: GP1M018A020PG.pdf; RFQ

: GHXS015A120S-D4; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOT SBD 1200V 15A SOT227; Na zalogi: 3961 pcs; Prenesi: GHXS015A120S-D4.pdf; RFQ

: GHIS075A120T2P2; Proizvajalci: Global Power Technologies Group; Opis: SI IGBT & SIC SBD HYBRID MODULES; Na zalogi: 557 pcs; Prenesi: GHIS075A120T2P2.pdf; RFQ

: GSXD030A008S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 80V 30A SOT227; Na zalogi: 10731 pcs; Prenesi: GSXD030A008S1-D3.pdf; RFQ

: 1N3890R; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 100V 12A DO4; Na zalogi: 21309 pcs; Prenesi: 1N3890R.pdf; RFQ

: GHXS050A060S-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTT SBD 600V 50A SOT227; Na zalogi: 2414 pcs; Prenesi: GHXS050A060S-D3.pdf; RFQ

: GDP30D120B; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 1200V 15A TO247-3; Na zalogi: 5045 pcs; Prenesi: GDP30D120B.pdf; RFQ

: GHIS040A060S-A1; Proizvajalci: Global Power Technologies Group; Opis: IGBT BOOST CHOP 600V 80A SOT227; Na zalogi: 4452 pcs; Prenesi: GHIS040A060S-A1.pdf; RFQ

: GP1M009A090N; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 900V 9.5A TO3PN; Na zalogi: 5181 pcs; Prenesi: GP1M009A090N.pdf; RFQ

: GSXF100A060S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE FAST REC 600V 100A SOT227; Na zalogi: 5554 pcs; Prenesi: GSXF100A060S1-D3.pdf; RFQ

: FR20J02; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 600V 20A DO5; Na zalogi: 12117 pcs; Prenesi: FR20J02.pdf; RFQ

: GSXD050A010S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 100V 50A SOT227; Na zalogi: 8760 pcs; Prenesi: GSXD050A010S1-D3.pdf; RFQ

: GSXD100A020S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 200V 100A SOT227; Na zalogi: 5840 pcs; Prenesi: GSXD100A020S1-D3.pdf; RFQ

: S25J; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 600V 25A DO203AA; Na zalogi: 20027 pcs; Prenesi: S25J.pdf; RFQ

: S12DR; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 200V 12A DO4; Na zalogi: 22893 pcs; Prenesi: S12DR.pdf; RFQ

: GP1M003A040PG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 400V 2A IPAK; Na zalogi: 4996 pcs; Prenesi: GP1M003A040PG.pdf; RFQ

: FR40D05; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 200V 40A DO5; Na zalogi: 14639 pcs; Prenesi: FR40D05.pdf; RFQ

: FR12BR02; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 100V 12A DO4; Na zalogi: 18405 pcs; Prenesi: FR12BR02.pdf; RFQ

: GP2D010A065C; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 650V 30A TO252; Na zalogi: 34157 pcs; Prenesi: GP2D010A065C.pdf; RFQ

: FR16G05; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 400V 16A DO4; Na zalogi: 18582 pcs; Prenesi: FR16G05.pdf; RFQ

: FST10030; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE MODULE 30V 100A TO249AB; Na zalogi: 1962 pcs; Prenesi: FST10030.pdf; RFQ

: GP1M008A025FG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 250V 8A TO220F; Na zalogi: 4693 pcs; Prenesi: GP1M008A025FG.pdf; RFQ

: FR12K05; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 800V 12A DO4; Na zalogi: 15138 pcs; Prenesi: FR12K05.pdf; RFQ

: GP2D003A060A; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 600V 3A TO220-2; Na zalogi: 81233 pcs; Prenesi: GP2D003A060A.pdf; RFQ

: GP2M002A065HG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 650V 1.8A TO220; Na zalogi: 5944 pcs; Prenesi: GP2M002A065HG.pdf; RFQ

: GP2M010A060H; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 600V 10A TO220; Na zalogi: 4871 pcs; Prenesi: GP2M010A060H.pdf; RFQ

: FR40G05; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 400V 40A DO5; Na zalogi: 13832 pcs; Prenesi: FR40G05.pdf; RFQ

: GP2D003A065A; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 650V 3A TO220-2; Na zalogi: 77359 pcs; Prenesi: GP2D003A065A.pdf; RFQ

: GP2M005A050PG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 500V 4.5A IPAK; Na zalogi: 4427 pcs; Prenesi: GP2M005A050PG.pdf; RFQ

: GB50SLT12-247; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE SCHOTTKY 1.2KV 50A TO247AC; Na zalogi: 947 pcs; Prenesi: GB50SLT12-247.pdf; RFQ

: S16GR; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN REV 400V 16A DO203AA; Na zalogi: 31994 pcs; Prenesi: S16GR.pdf; RFQ

: FST10060; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE MODULE 60V 100A TO249AB; Na zalogi: 2246 pcs; Prenesi: FST10060.pdf; RFQ

: GKR26/16; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 1.6KV 25A DO4; Na zalogi: 17651 pcs; Prenesi: GKR26/16.pdf; RFQ

: FR16BR05; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 100V 16A DO4; Na zalogi: 16618 pcs; Prenesi: FR16BR05.pdf; RFQ

: GSXD060A020S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 200V 60A SOT227; Na zalogi: 7482 pcs; Prenesi: GSXD060A020S1-D3.pdf; RFQ

: GP1M010A080H; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 800V 9.5A TO220; Na zalogi: 5547 pcs; Prenesi: GP1M010A080H.pdf; RFQ

: FST16045; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE MODULE 45V 160A TO249AB; Na zalogi: 2248 pcs; Prenesi: FST16045.pdf; RFQ

: 1N1184AR; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 100V 40A DO5; Na zalogi: 19839 pcs; Prenesi: 1N1184AR.pdf; RFQ

: FR6B02; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 100V 6A DO4; Na zalogi: 21702 pcs; Prenesi: FR6B02.pdf; RFQ

: GSID100A120T2P2; Proizvajalci: Global Power Technologies Group; Opis: SILICON IGBT MODULES; Na zalogi: 628 pcs; Prenesi: GSID100A120T2P2.pdf; RFQ

: FST12045; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE MODULE 45V 120A TO249AB; Na zalogi: 2428 pcs; Prenesi: FST12045.pdf; RFQ

: GKR26/08; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 800V 25A DO4; Na zalogi: 20546 pcs; Prenesi: GKR26/08.pdf; RFQ

: 1N2129A; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 100V 60A DO5; Na zalogi: 15496 pcs; Prenesi: 1N2129A.pdf; RFQ

: GP2M005A060PGH; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 600V 4.2A IPAK; Na zalogi: 5730 pcs; Prenesi: GP2M005A060PGH.pdf; RFQ

: GSXD120A012S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 120V 120A SOT227; Na zalogi: 5300 pcs; Prenesi: GSXD120A012S1-D3.pdf; RFQ

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