Global Power Technologies Group Distributer | Distributer elektronskih komponent Global Power Technologies Group - Ocean-Components.com

Global Power Technologies Group: - Global Power Technologies Group, Inc. ("GPTG"), ustanovljena leta 2007, je integrirano podjetje za razvoj in proizvodnjo, namenjeno izdelkom na osnovi tehnologij Silicon Carbide (SiC). Ti izdelki bodo v prihodnjih letih osnova za elektroenergetsko in energetsko industrijo, kjer so potrebne napredne tehnologije za nizkocenovno, visoko učinkovito proizvodnjo, pretvorbo in prenos energije.

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Podobni izdelki

: GP1M020A060N; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 600V 20A TO3PN; Na zalogi: 5995 pcs; Prenesi: GP1M020A060N.pdf; RFQ

: GP2M004A060PG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 600V 4A IPAK; Na zalogi: 81389 pcs; Prenesi: GP2M004A060PG.pdf; RFQ

: GHIS060A060S-A2; Proizvajalci: Global Power Technologies Group; Opis: IGBT BUCK CHOP 600V 120A SOT227; Na zalogi: 2776 pcs; Prenesi: GHIS060A060S-A2.pdf; RFQ

: GP1M009A020FG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 200V 9A TO220F; Na zalogi: 4940 pcs; Prenesi: GP1M009A020FG.pdf; RFQ

: FR16B02; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 100V 16A DO4; Na zalogi: 16133 pcs; Prenesi: FR16B02.pdf; RFQ

: GKR26/12; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 1.2KV 25A DO4; Na zalogi: 19390 pcs; Prenesi: GKR26/12.pdf; RFQ

: GP2D010A120B; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 1.2KV 10A TO247-2; Na zalogi: 25249 pcs; Prenesi: GP2D010A120B.pdf; RFQ

: GP2D003A060C; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 600V 3A DPAK-2; Na zalogi: 64956 pcs; Prenesi: GP2D003A060C.pdf; RFQ

: 1N3671A; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 800V 12A DO4; Na zalogi: 18464 pcs; Prenesi: 1N3671A.pdf; RFQ

: FR20DR02; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 200V 20A DO5; Na zalogi: 11699 pcs; Prenesi: FR20DR02.pdf; RFQ

: GP3D050A060B; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 600V 50A TO247-2; Na zalogi: 5877 pcs; Prenesi:; RFQ

: GSXF030A100S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE FAST REC 1000V 30A SOT227; Na zalogi: 10467 pcs; Prenesi: GSXF030A100S1-D3.pdf; RFQ

: GP2D005A065A; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 650V 15A TO220-2; Na zalogi: 54937 pcs; Prenesi: GP2D005A065A.pdf; RFQ

: GP2D020A060U; Proizvajalci: Global Power Technologies Group; Opis: DIODE ARRAY SCHOTTKY 600V TO247; Na zalogi: 15519 pcs; Prenesi: GP2D020A060U.pdf; RFQ

: GSXD050A018S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 180V 50A SOT227; Na zalogi: 7576 pcs; Prenesi: GSXD050A018S1-D3.pdf; RFQ

: FST16040; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE MODULE 40V 160A TO249AB; Na zalogi: 2213 pcs; Prenesi: FST16040.pdf; RFQ

: S6Q; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 1.2KV 6A DO4; Na zalogi: 16528 pcs; Prenesi: S6Q.pdf; RFQ

: GSXD120A018S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 180V 120A SOT227; Na zalogi: 5737 pcs; Prenesi: GSXD120A018S1-D3.pdf; RFQ

: MUR2540; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 400V 25A DO4; Na zalogi: 12827 pcs; Prenesi: MUR2540.pdf; RFQ

: 1N3213; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 500V 15A DO5; Na zalogi: 15692 pcs; Prenesi: 1N3213.pdf; RFQ

: GP2M008A060HG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 600V 7.5A TO220; Na zalogi: 5516 pcs; Prenesi: GP2M008A060HG.pdf; RFQ

: MBRT20030R; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE MODULE 30V 200A 3TOWER; Na zalogi: 2151 pcs; Prenesi: MBRT20030R.pdf; RFQ

: GHIS030A120S-A2; Proizvajalci: Global Power Technologies Group; Opis: IGBT BUCK CHOP 1200V 60A SOT227; Na zalogi: 3370 pcs; Prenesi: GHIS030A120S-A2.pdf; RFQ

: GP2M002A060FG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 600V 2A TO220F; Na zalogi: 3993 pcs; Prenesi: GP2M002A060FG.pdf; RFQ

: FST16080; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE MODULE 80V 160A TO249AB; Na zalogi: 2117 pcs; Prenesi: FST16080.pdf; RFQ

: S6MR; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 1KV 6A DO4; Na zalogi: 17942 pcs; Prenesi: S6MR.pdf; RFQ

: GDP60D120B; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 1200V 30A TO247-3; Na zalogi: 5600 pcs; Prenesi: GDP60D120B.pdf; RFQ

: FST10035; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE MODULE 35V 100A TO249AB; Na zalogi: 2160 pcs; Prenesi: FST10035.pdf; RFQ

: GHXS030A060S-D1; Proizvajalci: Global Power Technologies Group; Opis: MOD SBD BRIDGE 600V 30A SOT227; Na zalogi: 1797 pcs; Prenesi: GHXS030A060S-D1.pdf; RFQ

: 1N3765; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 700V 35A DO5; Na zalogi: 14065 pcs; Prenesi: 1N3765.pdf; RFQ

: FR16GR05; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 400V 16A DO4; Na zalogi: 17257 pcs; Prenesi: FR16GR05.pdf; RFQ

: GKN71/12; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 1.2KV 95A DO5; Na zalogi: 16058 pcs; Prenesi: GKN71/12.pdf; RFQ

: GP2M010A065H; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 650V 9.5A TO220; Na zalogi: 4399 pcs; Prenesi: GP2M010A065H.pdf; RFQ

: GP2D005A120C; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 1.2KV 5A DPAK-2; Na zalogi: 4199 pcs; Prenesi: GP2D005A120C.pdf; RFQ

: S12KR; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 800V 12A DO4; Na zalogi: 24366 pcs; Prenesi: S12KR.pdf; RFQ

: GP2D015A120A; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 1.2KV 50A TO220-2; Na zalogi: 8823 pcs; Prenesi: GP2D015A120A.pdf; RFQ

: GP2M012A060H; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 600V 12A TO220; Na zalogi: 4698 pcs; Prenesi: GP2M012A060H.pdf; RFQ

: GP2M020A050F; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 500V 18A TO220F; Na zalogi: 5887 pcs; Prenesi: GP2M020A050F.pdf; RFQ

: GSID200A170S3B1; Proizvajalci: Global Power Technologies Group; Opis: SILICON IGBT MODULES; Na zalogi: 589 pcs; Prenesi: GSID200A170S3B1.pdf; RFQ

: GP1M006A065FH; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 650V 5.5A TO220F; Na zalogi: 4953 pcs; Prenesi: GP1M006A065FH.pdf; RFQ

: GSXD080A004S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 45V 80A SOT227; Na zalogi: 9367 pcs; Prenesi: GSXD080A004S1-D3.pdf; RFQ

: GSXD050A012S1-D3; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 120V 50A SOT227; Na zalogi: 8719 pcs; Prenesi: GSXD050A012S1-D3.pdf; RFQ

: S6GR; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 400V 6A DO4; Na zalogi: 22385 pcs; Prenesi: S6GR.pdf; RFQ

: GKN71/08; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP 800V 95A DO5; Na zalogi: 18356 pcs; Prenesi: GKN71/08.pdf; RFQ

: GP2M008A060CG; Proizvajalci: Global Power Technologies Group; Opis: MOSFET N-CH 600V 7.5A DPAK; Na zalogi: 4940 pcs; Prenesi: GP2M008A060CG.pdf; RFQ

: GP2D020A120B; Proizvajalci: Global Power Technologies Group; Opis: DIODE SCHOTTKY 1.2KV 20A TO247-2; Na zalogi: 11980 pcs; Prenesi: GP2D020A120B.pdf; RFQ

: GCMS080A120B3C1; Proizvajalci: Global Power Technologies Group; Opis: SIC MOSFET 6-PACK MODULE B2_EASY; Na zalogi: 261 pcs; Prenesi: GCMS080A120B3C1.pdf; RFQ

: S25DR; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN REV 200V 25A DO203AA; Na zalogi: 23761 pcs; Prenesi: S25DR.pdf; RFQ

: S85QR; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN PURP REV 1.2KV 85A DO5; Na zalogi: 12976 pcs; Prenesi: S85QR.pdf; RFQ

: S25GR; Proizvajalci: GeneSiC Semiconductor; Opis: DIODE GEN REV 400V 25A DO203AA; Na zalogi: 23431 pcs; Prenesi: S25GR.pdf; RFQ

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